IXTH50N20 fet equivalent, megamos fet.
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to pro.
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VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
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